| 976 nm高效率半导体激光器 |
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| 引用本文： | 安振峰,林琳,徐会武,陈宏泰,车相辉,王晶,位永平. 976 nm高效率半导体激光器[J]. 半导体技术, 2011, 36(5): 345-347. DOI: 10.3969/j.issn.1003-353x.2011.05.002 |
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| 作者姓名： | 安振峰 林琳 徐会武 陈宏泰 车相辉 王晶 位永平 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051;中国电子科技集团公司第十三研究所,石家庄,050051;中国电子科技集团公司第十三研究所,石家庄,050051;中国电子科技集团公司第十三研究所,石家庄,050051;中国电子科技集团公司第十三研究所,石家庄,050051;中国电子科技集团公司第十三研究所,石家庄,050051;中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 基金项目： | 国家高科技研究发展计划(863计划)资助项目(2008AA000506) |
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| 摘 要： | 976 nm高效率半导体激光器是这几年研究的热点,在固体激光器泵浦领域有广阔的应用。通过优化半导体激光器材料外延结构中包覆层和波导层的铝组分,降低了工作电压;通过采用微通道水冷系统,并进行优化降低了热阻,从而提高了室温下的电光转换效率。25℃室温连续测试条件下,1 cm的线阵列(巴条),2 mm腔长,50%填充因子,在110 A下,出光功率为114.2 W,电压为1.46 V,电光转换效率为71%。15条微通道封装成的垂直叠阵,进行光束整形后,获得了室温976 nm连续输出功率1 500 W,电光转换效率大于70%。
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| 关 键 词： | 高效率 半导体激光器 976 nm 金属有机化合物化学气相淀积(MOCVD) 线阵列 |
976 nm High Efficiency Semiconductor Lasers |
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| An Zhenfeng,Lin Lin,Xu Huiwu,Chen Hongtai,Che Xianghui,Wang Jing,Wei Yongping. 976 nm High Efficiency Semiconductor Lasers[J]. Semiconductor Technology, 2011, 36(5): 345-347. DOI: 10.3969/j.issn.1003-353x.2011.05.002 |
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| Authors: | An Zhenfeng Lin Lin Xu Huiwu Chen Hongtai Che Xianghui Wang Jing Wei Yongping |
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| Affiliation: | An Zhenfeng,Lin Lin,Xu Huiwu,Chen Hongtai,Che Xianghui,Wang Jing,Wei Yongping(The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | 976 nm high efficiency semiconductor laser is the hot spot in research field,and it has a broad application prospect in pump region of solid laser.The operating voltage was depressed by optimum aluminium component of cladding and waveguide in semiconductor laser material epitaxial structure.The thermal resistance was depressed by optimize microchannel water cooling system,thereby improve the room temperature conversion efficiency.Under 25 ℃ room temperature continue test condition,the light power is 114.2 W at 110 A current,while the voltage is 1.46 V,and the conversion efficiency is 71%,when the cavity length is 2 mm and the fill factor is 50% with 1 cm bar.The vertical stack arrays were packaged by 15 strip microchannels.After light beam shaping,the 976 nm continuous output power 1 500 W is obtained at room temperature and the conversion efficiency is more than 70%. |
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| Keywords: | high efficiency semiconductor laser 976 nm metal-organic chemical vapor deposition(MOCVD) line array |
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