A new p-channel MOSFET with large-tilt-angle implanted punchthroughstopper (LATIPS)

A buried-channel p-MOSFET with a large-tile-angle implanted punchthrough stopper (LATIPS) is described. In this device the n⁺ LATIPS region was successfully realized adjacent to the p⁺ source/drain, even without a sidewall spacer, by taking advantage of the n⁺ large-tilt-angle implant. In spite of the relatively deep p⁺ junction of 0.2-μm depth and the low n-well concentration of 1×10¹⁶ cm^-3, the 0.5-μm LATIPS device (with corresponding channel length of 0.3 μm) achieved high punchthrough resistance, e.g. a low subthreshold swing of 95 mV/decade with a high transconductance of 135 mS/mm