Characterization of In0.53Ga0.47As photodiodes exhibiting low dark current and low junction capacitance |
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| Authors: | Leheny R. Nahory R. Pollack M. Beebe E. DeWinter J. |
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| Affiliation: | Bell Laboratories, Holmdel, NJ, USA; |
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| Abstract: | The preparation and properties of grown p-n homojunction In0.53Ga0.47As photodiodes for operation in the1-1.7 mum wavelength range are described. At a reverse bias of 20 V, these diodes exhibit generation-recombination limited dark current as low as2 times 10^{-9}A, junction capacitance of 0.3 pF, and pulse response corresponding to a circuit-limited rise time of 60 ps and diffusion-limited full width (FWHM) of 140 ps. |
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