银纳米线薄膜化学焊接工艺

目的为解决银纳米线(AgNWs)薄膜应用中存在较高节点电阻的问题,在不改变AgNWs薄膜透过率的条件下,利用卤化盐对AgNWs薄膜进行化学焊接,以降低AgNWs薄膜的表面方阻,并提高AgNWs薄膜的耐弯折性能。方法通过化学焊接方式对AgNWs薄膜进行改性处理,分析AgNWs薄膜化学焊接工艺的相关参数。如化学焊接试剂的选择,盐浴时间的优化,以及AgNWs墨水添加不同比例的PVA对其薄膜化学焊接效果的影响。结果研究得到最佳AgNWs薄膜化学焊接工艺,在AgNWs墨水中添加2份PVA,摇匀后涂布成膜,将AgNWs薄膜在质量分数为10%的NaCl溶液中浸泡60 s,用纯水反复清洗3次,每次10 s,之后用氮气吹干。化学焊接后,AgNWs薄膜的方阻下降了35.1%,方阻均匀性为9.0%。结论AgNWs薄膜经过化学焊接后,薄膜方阻和均匀性得到优化,光学性能保持不变,且外观良好,为其在柔性显示和电磁屏蔽领域应用奠定了技术基础。

Chemical Welding Process of AgNWs Film

This work aims to reduce high junction resistance between silver nanowires (AgNWs) film, chemical welding of AgNWs film is carrried out with halide salts without changing the transmittance of AgNWs film, the method not only reduces the sheet resistance of AgNWs film, but also improves the poor flexibility of AgNWs film. AgNWs film is modified by chemical welding, and the fators related the chemical welding process of AgNWs film is analyzed in detailed, such as the selection of chemical welding reagents, the optimization of salt bath time and the effects of PVA with different addition ratios on the chemical welding effect of AgNWs film.The study found that, the optimal chemical welding process of AgNWs film was obtained as follows:AgNWs ink was added with 2 parts of PVA, shaken well, and then coated to form the film. AgNWs film was immersed in 10% NaCl solution for 60 s,washed repeatedly in pure water for three times, each time for 10 s, and then dried with nitrogen. After chemical welding, the resistance of AgNWs films was decreased by 35.1% and the resistance uniformity was 9.0%. According to the above process research, after chemical welding of the AgNWs film, the sheet resistance and uniformity of the AgNWs film are optimized, the optical performance remains unchanged, and the appearance is good, which lays a technical foundation for its application in the field of flexible display and electromagnetic shielding.