| Abstract: | Abstract— Field emission from a series of tetrahedrally bonded amorphous‐carbon (ta‐C) films, deposited in a filtered cathodic vacuum arc, has been measured. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as‐grown undoped ta‐C films have threshold fields of the order 10–15 V/μm and optimally nitrogen doped films exhibit fields as low as 5 V/μm. In order to gain further understanding of the mechanism of field emission, the films were also subjected to H2, Ar, and O2 plasma treatments and were also deposited onto substrates of different work function. The threshold field, emission current, and emission site densities were all significantly improved by the plasma treatment, but little dependence of these properties on work function of the substrate was observed. This suggests that the main barrier to emission in these films is at the front surface. |
