Optical and RF characteristics of short-cavity-lengthmultiquantum-well strained-layer lasers |
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| Authors: | Lester LF Schaff WJ Song X Eastman LF |
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| Affiliation: | Dept. of Electr. Eng., Cornell Univ., Ithaca, NY ; |
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| Abstract: | The optical and RF characteristics of short-cavity, strained-layer In0.3Ga0.7As graded-index separate-confinement-heterostructure (GRINSCH) multiple-quantum-well ridge waveguide lasers are described. Short-cavity-length strained-layer lasers with four In0.3Ga0.7As quantum wells have been fabricated using chemically assisted ion beam etching (CAIBE). These lasers have a very low K factor of 0.14 ns and a high differential gain of 1.1×10-15 cm2. A 3 dB modulation bandwidth of 23.5 GHz has been measured on a 50 μm cavity-length device. This is the highest reported bandwidth for a quantum well laser |
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