| 发射型PZT压电陶瓷的应变及性能 |
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| 引用本文： | 王鸿,潘晓明. 发射型PZT压电陶瓷的应变及性能[J]. 无机材料学报, 1988, 0(2) |
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| 作者姓名： | 王鸿 潘晓明 |
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| 作者单位： | 中国科学院上海硅酸盐研究所(王鸿)，中国科学院上海硅酸盐研究所(潘晓明) |
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| 摘 要： | 测量了几种发射型 PZT 压电陶瓷的电场应变曲线和电滞回线,探讨了它们与性能间的关系。认为 PZT陶瓷的应变量是一个与剩余极化量同样重要的用来衡量材料压电性能的基本参数。PZT 压电陶瓷的应变由两部分组成:低场强下的应变由畴的转向形成,高场强下的应变则是以畴伸缩产生的应变为主。单位场强的畴伸缩应变量与准静态压电系数 d_(33)值相当。
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| 关 键 词： | 电致伸缩应变 电滞回线 畴 PZT 压电陶瓷 |
Strain and Properties of Transmitting Type PZT Ceramics |
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| Wang Hong Pan Xiaoming. Strain and Properties of Transmitting Type PZT Ceramics[J]. Journal of Inorganic Materials, 1988, 0(2) |
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| Authors: | Wang Hong Pan Xiaoming |
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| Abstract: | The electric field-strain curve and the hysteresis loop of four kinds of unpo-led and poled transmitting type PZT ceramics have been obtained.It can beconsidered that such strain is a basic parameter as important as the residualpolarization for estimating the piezoelectric performance of PZT ceramics.Theelectric field-strain curve of the PZT ceramics consists of two parts:one comesfrom the low electriofield due to domain switching and the other from the highelectric field principally as a result of electrostriction of domains.The electrostri-ctive strain of domains induced by unit electric field has been found corresponding(?)the value of quasi-static piezoelectric coe-fficient d_(33). |
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| Keywords: | Electrostrictive strain Hysteresis loop Domain PZT Piezoelectric ceramics |
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