| 掺杂In和PbI_2的n-PbTe材料的研究 |
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| 引用本文： | 龙春泉,于俊鹏,Y.Gelbstein,张建中.掺杂In和PbI_2的n-PbTe材料的研究[J].电源技术,2009,33(9). |
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| 作者姓名： | 龙春泉 于俊鹏 Y.Gelbstein 张建中 |
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| 作者单位： | 1. 中国电子科技集团公司第十八研究所,天津,300381
2. 以色列内盖夫区本-固立昂大学材料工程学院,以色列 |
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| 摘 要： | 在传统的掺杂卤族元素基础上掺杂一定的In元素,制备出高性能的n-PbTe基温差电材料;采用中频感应熔炼炉合金化得到均匀的基体,粉碎,然后在一定温度和压力下压制粉体得到样品锭块.测试了样品的热电性能,并且用场发射透射电镜对样品进行了微观分析,结果表明掺杂合适的Pbl2和In后,可以改善材料的热电性能,在一个较宽的温度范围内材料优值都保持一个较高的值.
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| 关 键 词： | PbTe基材料 掺杂 热电性能 |
Study on n-type PbTe material doped with In and PbI_2 |
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| LONG Chun-quan,YU Jun-peng,Y.Gelbstein,ZHANG Jian-zhong.Study on n-type PbTe material doped with In and PbI_2[J].Chinese Journal of Power Sources,2009,33(9). |
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| Authors: | LONG Chun-quan YU Jun-peng YGelbstein ZHANG Jian-zhong |
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| Affiliation: | LONG Chun-quan 1,YU Jun-peng 1,Y.Gelbstein2,ZHANG Jian-zhong 1(1.Tianjin Institute of Power Sources,Tianjin 300381,China,2.Department of Materials Engineering,Ben-Gurion University of the Negev,Beer-Sheva 84105,Israel) |
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| Abstract: | Lead telluride is traditional thermoelectric material at middle temperature and widely applied for electricity generation.They have been attracting many scientists to research on.The paper reports an n-type PbTe materials with high thermoelectric performances based on the traditional halogen-doping mechanism with additional indium.The PbTe based materials doped indium and PbI2 are prepared by powder metallurgy technology.We use an intermediate frequency induced furnace for primary alloy preparation.The allo... |
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| Keywords: | materials based lead telluride doping thermoelectric properties |
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