铋膜电极阳极溶出伏安法检测痕量Cd金属

镉氧化产生的溶出电流与样品中Cd²⁺的浓度有关。本研究通过方波阳极溶出伏安法(SWASV)在活化铋膜电极(Activated BFE)上对低浓度μg/L水平的Cd(II)进行测定。通过电化学方法对电极进行初步改性, 然后电沉积制备铋膜再次对电极进行改进, 从而增强了对痕量目标Cd²⁺的敏感性。对改性前后的玻碳电极(GCE)表面进行SEM、CV、EIS和SWV的表征。为了将这种伏安法传感器应用于含有低浓度Cd²⁺的实际样品中, 对检测Cd²⁺的实验参数进行了研究。使用选定的条件, 在10 min的预富集条件下Cd²⁺的检测限为1 μg/L。

Detection of Cd2+ by Square Wave Anodic Stripping Voltammetry Using an Activated Bismuth-film Electrodes

The stripping current arising from the oxidation of Cd was related to the concentration of Cd²⁺ in the sample. This study presents the determination of Cd(II) at low concentration μg/L levels by square wave anodic stripping voltammetry (SWASV) on an activated bismuth-film electrode (BFE). The electrode was initially modified by an electrochemical method, and then the electrodeposited bismuth-film was prepared again to improve the electrode, thereby enhancing the sensitivity to trace amounts of target Cd²⁺. The surface of glassy carbon electrode (GCE) before and after modification was characterizad by SEM, CV, EIS, and SWV. The parameters for the determination of the Cd²⁺ were investigated with the view of its application toward real samples containing low concentrations of Cd²⁺. Using the selected conditions, the limit of detection is 1 μg/L for Cd²⁺ at a preconcentration time of 10 min.