ZnO纳米棒/ZnCo2O4纳米片异质结的制备及其光电探测性能

ZnO纳米材料异质结是构筑高性能紫外光电探测器的有力候选之一。本工作中, 设计并制备了一种新型ZnO纳米棒/ZnCo₂O₄纳米片异质结, 研究了其电学性能及光电探测性能。使用油水界面自组装, 将ZnCo₂O₄纳米片在ITO玻璃上组装为均匀的薄膜; 通过调控ZnO种子层厚度, 在ZnCo₂O₄纳米片薄膜上水热生长了取向一致、密度适中的ZnO纳米棒阵列, 获得了高质量的ZnO纳米棒/ZnCo₂O₄纳米片异质结。该异质结具有优良的整流特性, 整流比达到673.7; 其工作在反偏状态时, 光暗电流比超过2个量级, 紫外-可见判别比为29.4, 在光电探测中有良好的波长选择特性。研究表明, 该异质结有潜力应用于构筑高性能紫外光电探测器。

Preparation and Photodetection Property of ZnO Nanorods/ZnCo2O4 Nanoplates Heterojunction

Heterojunction-type nanostructures based on ZnO nanomaterials are one of the important candidates for constructing high-performance ultraviolet (UV) photodetectors. In this work, a novel ZnO nanorods/ZnCo₂O₄ nanoplates heterojunction was designed and prepared, and the electrical properties and photodetection properties of the as-prepared heterojunction were investigated. ZnCo₂O₄ nanoplates were constructed into uniform thin film on ITO glass substrate using oil/water interface self-assembly. Next, ZnO nanorod arrays with uniform orientation and proper density were grown on ZnCo₂O₄ nanoplates thin film using hydrothermal method with the help from ZnO seed layer. As a result, high-quality ZnO nanorods/ZnCo₂O₄ nanoplates heterojunction was achieved. This heterojunction has a high rectification ratio of 673.7. Under reverse bias, this heterojunction has a light-dark current ration of more than two orders of magnitude. The UV-visible rejection ratio of this heterojunction is 29.4, which indicates its selective detection of UV light. These results effectively prove the potential of this ZnO nanorods/ZnCo₂O₄ nanoplates heterojunction in constructing high-performance UV photodetectors.