透明导电膜ZnO:Al(ZAO)的组织结构与特性

ZnO:Al(ZAO)是一种简单并半导体氧化物薄膜材料，具有高的载流子浓度和光学禁带宽度，因而具有优异的电学和光学性能，极具应用价值，对于其能级高度简并的ZAO半导体薄膜材料，在较低的温度下，离化杂质散射占主导地位，在较高的温度下，晶格振动散射将成为主要的散射机制；晶界散射仅当晶粒尺寸较小（与电子的平均自由程相当）时才起作用，本文分析了ZAO薄膜的制备方法，晶体结构特性，电子和光学性能以及载流子的散射机制。

MICROSTRUCTURE AND PROPERTIES OF TRANSPARENT CONDUCTIVE OXIDE ZnO:Al(ZAO) THIN FILMS

ZnO: Al (ZAO)is one of highly degenerate semi-conductive oxide films. Due to both high carrier concentration and large optical band gap, ZnQ:Al has outstanding electrical and optical properties, and is emerging as a most potential alternative candidate for transparent conducting materials. The crystal structure and preparation of Al-doped ZnO films, as well as their electrical and optical properties and corresponding scattering mechanism are summarized in this paper. For highly degenerate ZnO:Al semiconductor thin films, it was revealed that the ionized impurity scattering dominated the hall mobility of films in the low-temperature range; while the lattice vibration became a major scattering mechanism in the high-temperature range. The grain boundary scattering only played a major role in the ZAO films with small grain size (as compared to the electron mean free path). The proposal for the future research is also offered.