Theory of field enhanced non-equilibrium transients in MIS devices under a linear voltage sweep

A theoretical method has been formulated to simulate the field enhanced non-equilibrium transients in MIS devices under linear voltage sweep. Unlike previous theories the carrier emission probability is assumed to be field-dependent. The one dimensional Poole-Frenkel model and Hartke model are used to the carrier emission probability of traps dependent on the applied electric field. These models are quite available for coulombic centers. A reasonable model of the effective generation region is applied to analyse the transients, and the non-steady-state generation effect is taken into account. The I/V characteristics at different voltage sweep rates have been obtained. The effect of field enhanced carrier emission and the effect of non-steady-state generation on I/V characteristics are discussed in detail.