1.5-μm tapered-gain-region lasers with high-CW output powers |
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| Authors: | Donnelly J.P. Walpole J.N. Groves S.H. Bailey R.J. Missaggia L.J. Napoleone A. Reeder R.E. Cook C.C. |
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| Affiliation: | Lincoln Lab., MIT, Lexington, MA; |
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| Abstract: | High-power diode lasers consisting of a a tapered region have waveguide section coupled to fabricated in 1.5-μm InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers of >1 W with ≈80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters |
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