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Sb在高硅铝硅合金电磁分离过程中的变质行为
引用本文:杨雄东,王均鹏,马文会,吕国强,邢爱民. Sb在高硅铝硅合金电磁分离过程中的变质行为[J]. 过程工程学报, 2022, 22(1): 62-71. DOI: 10.12034/j.issn.1009-606X.220401
作者姓名:杨雄东  王均鹏  马文会  吕国强  邢爱民
作者单位:1. 昆明理工大学复杂有色金属资源清洁利用省部共建国家重点实验室,云南 昆明 6500932. 昆明理工大学冶金与能源工程学院,真空冶金国家工程实验室,云南 昆明 6500933. 云南能投化工有限责任公司,云南 昆明 650093
基金项目:国家自然科学基金资助项目;上海市科学技术委员会的课题基金资助课;省部共建高品质特殊钢冶金与制备国家重点实验室、上海市钢铁冶金新技术开发应用重点实验室开放课题
摘    要:研究了高硅铝硅合金(45wt% Si)熔体电磁分离过程中,Sb添加量、下拉速率、温度等对分离效果的影响,对Sb在高硅铝硅合金电磁分离过程中的变质机理进行了分析。结果表明,在1500℃、下拉速率为10 μm/s时,过共晶铝硅合金熔体中加入Sb进行定向凝固后,合金部分硅铝比从11.53%降至11.21%,初晶硅富集区的硅含量从86wt%增至90wt%;当1500℃、下拉速率为40 μm/s时,合金部分硅铝比从12.56%降至12.13%,初晶硅富集区的硅含量从81wt%增至86.5wt%;加入变质剂后合金部分共晶硅相在α-Al基体中分布均匀且连续,形貌有所细化。

关 键 词:高硅铝硅合金  初晶硅  电磁定向凝固  变质剂Sb  
收稿时间:2020-12-10

Modification behavior of Sb in electromagnetic separation process of high silicon aluminum silicon alloy
Xiongdong YANG,Junpeng WANG,Wenhui MA,Guoqiang L,Aimin XING. Modification behavior of Sb in electromagnetic separation process of high silicon aluminum silicon alloy[J]. Chinese Journal of Process Engineering, 2022, 22(1): 62-71. DOI: 10.12034/j.issn.1009-606X.220401
Authors:Xiongdong YANG  Junpeng WANG  Wenhui MA  Guoqiang L  Aimin XING
Affiliation:1. National Key Laboratory Jointly Established by Province and Ministry for Clean Utilization of Complex Non-ferrous Metal Resources, Kunming University of Science and Technology, Kunming, Yunnan 650093, China2. Faculty of Metallurgical and Energy Engineering, National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, Yunnan 650093, China3. Yunnan Energy Investment Chemical Co., Ltd., Kunming, Yunnan 650093, China
Abstract:Aimed at the electromagnetic separation process of high silicon aluminum silicon alloy, addition of the modifier Sb in the separation process was proposed to and the effects of the addition amount of the modifier Sb, the pull-down rate, and the temperature on the separation effect in the electromagnetic separation process of the high silicon aluminum silicon alloy (45wt% Si) to strengthen the separation of primary silicon and alloy were studied. In the early stage of the directional solidification process, the modification experiment was carried out to perform XRF detection and FEI-SEM scanning of the silicon content in the primary silicon enrichment area of the sample, and the EPMA analysis of the micro morphology of the alloy part. Later, referred to the Sb modification mechanism in the relevant literature, Comsol software was used to simulate the electromagnetic directional solidification process of Al-45wt% Si. The separation theory of primary crystal silicon and the theory of silicon grain refinement were used to discuss the metamorphic behavior of Sb. After the addition of Sb, the eutectic reaction temperature of the aluminum-silicon alloy decreased and the entire solidification process became longer. Theoretically, the primary crystal silicon can obtain more sufficient growth conditions, which was beneficial to the enrichment of the primary crystal silicon. The results showed that after adding the modifier at 1500℃, when the pull-down rate was 10 μm/s, the silicon content in the silicon-rich phase increased from 86wt% to 90wt%. When the pull-down rate was 40 μm/s, the silicon content in the silicon-rich phase increased from 81wt% to 86.5wt%. At the same time, after adding the modifier, the eutectic silicon phase of the alloy was uniformly and continuously distributed in the α-Al matrix, and the morphology was refined.
Keywords:High silicon aluminum silicon alloy   Primary crystal silicon  electromagnetic directional solidification   Modifier Sb  
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