AIN-based dilute magnetic semiconductors |
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| Authors: | R. M. Frazier G. T. Thaler B. P. Gila J. Stapleton M. E. Overberg C. R. Abernathy S. J. Pearton F. Ren J. M. Zavada |
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| Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL;(2) Department of Chemical Engineering, University of Florida, USA;(3) United States Army Research Office, 27709 RTP, NC |
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| Abstract: | AlMnN and AlCrN have been synthesized by gas-source molecular beam epitaxy (GSMBE). Using optimized growth conditions and compositions, sccm films as determined by x-ray diffraction (XRD) and transmission electron microscopy, which also show room-temperature magnetic behavior were obtained for both materials. Chromium was found to produce greater magnetic ordering as evidenced by a higher technical saturation. The AlCrN also exhibited a higher remanent magnetization and a M versus T behavior more typical of ferromagnetism than that observed for AlMnN. These results suggest that Cr is a superior dopant for formation of AlN-based, dilute magnetic semiconductors. |
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| Keywords: | AlMnN AlCrN magnetic semiconductors |
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