Synthesis of graphene together with undesired CuxO nanodots on copper foils by low-pressure chemical vapor deposition |
| |
| Affiliation: | 1. Computer Engineering Department, MEF Group of Institutions, Rajkot, Gujarat, India;2. Department of Information Technology, Sikkim Manipal Institute of Technology, Sikkim, India;3. Jan Wyzykowski University, Skalnikow St.No.6 B-59-101, Polkowice, Poland;1. NTT Network Innovation Laboratories, NTT Corporation, Japan;2. Graduate School of Information Science and Technology, Hokkaido University, Japan;1. School of Engineering and Mathematical Sciences, City, University of London, UK;2. Department of Electrical Engineering, Frederick University, Nicosia, Cyprus |
| |
| Abstract: | The synthesis of graphene on Cu foils has been carried out using a low-pressure chemical vapor deposition (LPCVD) process. Under certain growth conditions apart from the graphene flakes, undesired CuxO nanodots appear. The samples were characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photoemission spectroscopy. On the basis of the results, we investigated the effect of growth parameters such as pressure, methane-to-hydrogen ratio and cooling atmosphere on the growth rate, the composition, especially the cleanliness of graphene by scanning electron microscopy in detail. It is shown that the obtained film is quite sensitive on the preparation conditions and the appearance of CuxO nanodots is preventable. |
| |
| Keywords: | Graphene Chemical vapor deposition Cu foil |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
