Etch characteristics of CoFeB magnetic thin films using high density plasma of a H2O/CH4/Ar gas mixture期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Etch characteristics of CoFeB magnetic thin films using high density plasma of a H2O/CH4/Ar gas mixture

Affiliation:	1. Center for Modern Physics Technology, Applied Physics Department, School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology, Beijing, Xueyan Road 30, Haidian District 100083, Beijing, China;2. Russian Quantum Center, Moscow 143025, Russia;3. Lomonosov Moscow State University, Moscow 119991, Russia;4. Guangdong Institute of Semiconductor Industrial Technology, Guangdong Academy of Sciences, Guangzhou 510650, China;1. Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest, Romania;2. Institute Jožef Stefan, Ljubljana, Slovenia;3. State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk, Belarus;1. imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;2. now at Kaneka Belgium NV, Nijverheidsstraat 16, 2260 Westerlo-Oevel, Belgium

Abstract:	Etch characteristics of CoFeB magnetic thin films patterned with TiN hard masks were investigated using inductively coupled plasma reactive ion etching in H₂O/Ar and H₂O/CH₄ gas mixes. As the H₂O concentration in the H₂O/Ar gas increased, the etch rates of CoFeB and TiN films decreased simultaneously, while the etch selectivity increased and etch profiles improved slightly without any redeposition. The addition of CH₄ to the H₂O gas resulted in an increase in etch selectivity and a higher degree of anisotropy in the etch profile. X-ray photoelectron spectroscopy was performed to understand the etch mechanism in H₂O/CH₄ plasma. A good pattern transfer of CoFeB films masked with TiN films was successfully achieved using the H₂O/CH₄ gas mix.

Keywords:	CoFeB magnetic thin films Magnetic tunnel junction MRAM Inductively coupled plasma reactive ion etching
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