| Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere |
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| 引用本文： | 李文超,樊自拴,孙贵如,秦福. Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere[J]. 材料科学技术学报, 1989, 5(5): 362-365 |
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| 作者姓名： | 李文超 樊自拴 孙贵如 秦福 |
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| 作者单位： | University of Science and Technology of Beijing China.，University of Science and Technology of Beijing China.，General Research Institute for Nonferrous Metals Beijing China.，General Research Institute for Nonferrous Metals Beijing China. |
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| 摘 要： | 1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve
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| 收稿时间： | 1989-09-28 |
Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere |
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| LI Wenchao FAN Zishuan SUN Guiru QIN Fu University of Science and Technology of Beijing,China. General Research Institute for Nonferrous Metals,Beijing,China.. Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere[J]. Journal of Materials Science & Technology, 1989, 5(5): 362-365 |
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| Authors: | LI Wenchao FAN Zishuan SUN Guiru QIN Fu University of Science Technology of Beijing China. General Research Institute for Nonferrous Metals Beijing China. |
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| Abstract: | |
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| Keywords: | oxidation mechanism silicon monocrystal oxide film morphology |
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