| Abstract: | Oxygen atoms play a very important role in atmospheric-pressure chemical vapor deposition CVD processes for silicon dioxide films using tetraethylorthosilicate TEOS and ozone. In this study, efficient generation of active oxygen species including these oxygen atoms has been successfully realized by use of a squared-pulsed silent discharge with very sharp rising and falling of applied voltage. Discharge characteristics and effects of various discharge parameters on ozone generation have been investigated experimentally, and the mechanism of the high performance is discussed. This ozone is one of the important active oxygen species in the oxidation reaction processes. Generation characteristics of other active oxygen species are estimated by use of chemical kinetics simulation. As a result, it is shown that pulsed silent discharge can form a highly nonequilibrium plasma at atmospheric pressure and room temperature and then generate active oxygen species efficiently. |
