MOLECULAR APPROACH TO MATERIAL DETACHMENT MECHANISM DURING CHEMICAL MECHANICAL PLANARIZATION

Mechanistic numerical analysis and molecular dynamics (MD) simulation are employed to understand the material detachment mechanism associated with chemical mechanical polishing. We investigate the mechanics of scratch intersection mechanism to obtain a characteristic length scale and compare the theoretical predictions with previous experimental observations on ductile copper discs at the micro-scale. First, an analytical model is developed based on mechanics of materials approach. The analytical model includes the effects of strain hardening during material removal as well as the geometry of indenter tip. In the next step, molecular simulations of the scratch intersection are performed at the atomistic scale. The embedded atom method (EAM) is utilized as the force field for workpiece material and a simplified tool-workpiece interaction is assumed to simulate material removal through scratch intersection mechanism. Both models are utilized to predict a characteristic length of material detachment related to material removal during scratch intersection. The predictions from two approaches are compared with experimental observations in order to draw correlations between experiment and simulation. The insights obtained from this work may assist in understanding the mechanism for chemical mechanical planarization (CMP), and even be applied to other different machining and polishing events.