| 多晶硅薄膜的两步激光晶化技术 |
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| 引用本文： | 曾祥斌,徐重阳,王长安. 多晶硅薄膜的两步激光晶化技术[J]. 压电与声光, 2002, 24(4): 315-317,326 |
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| 作者姓名： | 曾祥斌 徐重阳 王长安 |
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| 作者单位： | 华中科技大学,电子科学与技术系,武汉,430074 |
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| 基金项目： | 香港科技大学电气与电子工程系资助项目 (HPKUST 6183 10 0 E) |
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| 摘 要： | 采用两步激光晶化技术获得了多晶硅薄膜，分析计算了激光晶化时薄膜中的温度分布及表面温度与激光功率密度的关系，利用计算结果并优化了激光晶化时的工艺参数，采用该技术制备了性能优良的顶栅多晶硅薄膜晶体管，测量了薄膜晶体管的转移特性与输入输出特性，从多晶硅薄膜的制备工艺上分析了提高薄膜晶体管性能的原因。
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| 关 键 词： | 多晶硅薄膜 激光晶化 薄膜晶体管 |
| 文章编号： | 1004-2474(2002)04-0315-03 |
The Study of Two-Step Laser Crystallization Technique of Polycrystalline Silicon Thin Film |
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| ZENG Xiang bin,XU Zhong yang,WANG Chang an. The Study of Two-Step Laser Crystallization Technique of Polycrystalline Silicon Thin Film[J]. Piezoelectrics & Acoustooptics, 2002, 24(4): 315-317,326 |
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| Authors: | ZENG Xiang bin XU Zhong yang WANG Chang an |
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| Abstract: | The poly Si thin film was prepared using a novel two step laser crystallization technique.The temperature distribution and surface temperature of poly Si thin film during laser crystallization was calculated by solving the thermal transfer conduction equation.The process parameters of laser crystallization of poly Si thin film were considered and optimized using the calculated results.The high performance poly Si TFTs were achieved using two step laser crystallization technique.The I V and transfer characteristics of poly Si TFTs fabricated using two step laser crystallization and conventional single step laser crystallization were measured.The reason that the characteristics of poly Si TFT were improved by two step laser crystallization was analyzed |
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| Keywords: | laser crystallization poly Si thin film thin film transistors |
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