Buried nanoscale damaged layers formed in Si and SiC crystals as a result of high-dose proton implantation |
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| Authors: | V. A. Kozlov V. V. Kozlovskii A. N. Titkov M. S. Dunaevskii A. K. Kryzhanovskii |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia |
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| Abstract: | Buried nanoscale damaged layers formed in Si and SiC crystals via 50-and 100-keV proton implantation were studied. It is shown that the sensitivity of atomic-force microscopy is sufficiently high to detect the initial stages of the development of hydrogen-containing voids and microcracks in subsurface layers of irradiated crystals and to study exfoliation of the crystals in the plane of microcracks. As a result, quantitative criteria for the formation of buried damaged layers in the studied crystals were derived; also, the conditions for blistering and for implementation of the “Smart-Cut” technology were determined. |
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