Transient thermal analysis of sapphire wafers subjected to thermal shocks

Rapid heating and cooling are commonly encountered events in integrated circuit processing, which produce thermal shocks and consequent thermal stresses in wafers. The present paper studies the heat transfer in sapphire wafers during a thermal shock as well as the dependence of the wafer temperature on various process parameters. A three-dimensional finite-element model of a single sapphire wafer was developed to analyze the transient heat conduction in conjunction with the heat radiation and heat convection on the wafer surfaces. A silicon wafer was also investigated, for comparison. It was found that the rapid thermal loading leads to a parabolic radial temperature distribution, which induces thermal stresses even if the wafer is not mechanically restrained. The study predicted that for sapphire wafers the maximum furnace temperature of 800 /spl deg/C should be held for two hours in order to get a uniform temperature throughout the wafer.