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Optimization of a schottky barrier mixer diode in the submillimeter wave region |
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| Authors: | T. Nozokido J. J. Chang C. M. Mann T. Suzuki K. Mizuno |
| Affiliation: | 1. Photodynamics Research Center (PDC), The Institute of Physical and Chemical Research (RIKEN), 19-1399, Aza-Koeji, Nagamachi, Aoba-ku, 980, Sendai, Japan 2. Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-77, Sendal, Japan |
| Abstract: | We have designed a mixer Schottky barrier diode (SBD) for use in the submillimeter wave region with a structure optimized for minimum noise temperature. The dependence of mixer noise temperature upon thickness and doping density of the epitaxial layer and diode diameter of SBDs was simulated within the framework of existing theories. Special care was taken to formulate the SBD current-voltage and capacitance-voltage relations in a way that correctly describes the behavior of real SBDs. |
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