Fabrication of 0.95Sn−0.05Au solder micro-bumps for flip-chip bonding |
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Authors: | Takao Ishii Shinji Aoyama Masami Tokumitsu |
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Affiliation: | (1) NTT Photonics Laboratories, 3-1 Morinosato-Wakamiya Atsugi-shi, 243-0198 Kanagawa, Japan |
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Abstract: | This letter describes the successful fabrication of a 0.95Sn−0.05Au solder microbump on a compound semiconductor wafer by reflowing of multi-layer metal film. Since the inherent interdiffusion in Au−Sn phases results in the alloying of multi-layer films, the composition of micro-bump is well controlled by the thickness of constituent metal films. The micro-bumps melt at about 220 C, which is close to the lowest eutectic temperature in a Au−Sn system. Solder bonding using 0.95Sn−0.05Au micro-bump is a very useful technique for the flipchip bonding of compound semiconductor devices. |
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Keywords: | Micro-bump Sn− Au lead-free solder flip-chip bonding |
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