The Correlation of Surface Defects and Reverse Breakdown of 4H-SiC Schottky Barrier Diodes |
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Authors: | Kung-Yen Lee Michael A Capano |
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Affiliation: | (1) Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906, USA |
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Abstract: | Surface defect characterization and the influence of selected surface defects on the reverse characteristics of 4H-SiC Schottky
barrier diodes (SBDs) are investigated, with particular emphasis on comet and carrot defects. Premature breakdown caused by
comets occurs at voltages below 250 V for an SBD with ideal parallel plane breakdown of 1,600 V. The location of comets relative
to the Schottky contact ultimately determines the reverse characteristics of the device. The reverse breakdown voltage of
SBDs with carrot defects can be more than 1,000 V, but the reverse leakage current is about two orders higher than that of
a defect-free SBD. The SBDs of diodes with and without carrots are 1.01 eV and 1.44 eV, respectively. The SBDs, which catastrophically
fail during reverse bias measurement, are investigated as well. The average breakdown voltage of SBDs, which failed catastrophically,
is about 745 V. According to the experimental observations, catastrophic failures are not associated with obvious surface
defects, crystallographic directions, or postimplant annealing time. |
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Keywords: | Silicon carbide Schottky barrier diodes electrical charecterization defects |
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