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Excess drain noise simulation in ultrathin oxides MOSFETs |
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| Authors: | T Contaret G Ghibaudo A Ferron F B?uf |
| Affiliation: | (1) IMEP, UMR CNRS/INPG/INPG/UJF, ENSERG, BP 257, 38016 Grenoble, France;(2) Silvaco data systems, Zirst II, 38330 Montbonnot St Martin, France;(3) STMicroelectronics, BP 16, 38921 Crolles, France |
| Abstract: | |
| Keywords: | Gate-leakage current noise model Extrinsic channel noise model Ultrathin oxides MOSFETs Macroscopic noise model Impédance field method |
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