Determination of the charge transport mechanism in <Emphasis Type="Italic">p-n</Emphasis> junctions by analyzing temperature dependences of forward current-voltage characteristics |
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| Authors: | N S Grushko A V Lakalin A I Somov |
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| Affiliation: | (1) Ul’yanovsk State University, Ul’yanovsk, Russia |
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| Abstract: | A method is suggested for determining the charge transport mechanism in p-n junctions by analyzing the temperature dependence of forward current-voltage characteristics at a low injection level. The method has been experimentally tested with Si:Au diodes, green GaP LEDs, and blue AlGaN/InGaN/GaN LEDS with a quantum well. |
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