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Comparison between the effects of positive noncatastrophic HBM ESDstress in n-channel and p-channel power MOSFETs
Authors:Zupac  D Baum  KW Kosier  SL Schrimpf  RD Galloway  KF
Affiliation:Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ;
Abstract:The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain
Keywords:
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