Comparison between the effects of positive noncatastrophic HBM ESDstress in n-channel and p-channel power MOSFETs |
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Authors: | Zupac D Baum KW Kosier SL Schrimpf RD Galloway KF |
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Affiliation: | Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ; |
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Abstract: | The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain |
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