| 多晶硅梁疲劳损坏特性的研究 |
| |
| 引用本文： | 余存江,唐洁影,恩云飞,师谦.多晶硅梁疲劳损坏特性的研究[J].传感技术学报,2006,19(5):1599-1601,1605. |
| |
| 作者姓名： | 余存江 唐洁影 恩云飞 师谦 |
| |
| 作者单位： | 1. 东南大学MEMS教育部重点实验室,南京,210096
2. 信息产业部电子第五研究所可靠性研究分析中心,广州,510610 |
| |
| 基金项目： | 国防重点实验室基金，国家重点实验室基金 |
| |
| 摘 要： | 针对多晶硅的疲劳失效机理,人们已经提出了一些解释的模型.然而,到目前为止没有一种模型能够全面地阐述疲劳失效机理.本文旨在采用参量的渐变,如平均杨氏模量E,来反映MEMS多晶硅梁的疲劳.通过测试周期性载荷下双端固支梁结构的pull-in电压变化,确定杨氏模量E的变化,进而表征梁的疲劳失效状态.
|
| 关 键 词： | 多晶硅 疲劳 MEMS 梁 杨氏模量. |
| 文章编号： | 1004-1699(2006)05-1599-03 |
| 修稿时间： | 2006年7月1日 |
Research on the Fatigue Damage of a Polysilicon Beam |
| |
| Yu cunjiang,Tang Jieying,En Yunfei,Shi Qian.Research on the Fatigue Damage of a Polysilicon Beam[J].Journal of Transduction Technology,2006,19(5):1599-1601,1605. |
| |
| Authors: | Yu cunjiang Tang Jieying En Yunfei Shi Qian |
| |
| Affiliation: | 1. Key Laboratory of MEMS Ministry of Education, Southeast University, Nanjing 210096, China;
2. CEPREI, Guangzhou 510610, China)
Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096 |
| |
| Abstract: | Many research works on the fatigue properties of a MEMS structure have been reported. Several models have been proposed to explain the phenomena and behaviors of the specimen during their fatigue damage. No reasonable model, however, can comprehensively explain the mechanism of the fatigue damage of polysilicon. This paper focuses on the method using gradually varying parameter, for instance the mean value of Young's Modulus E, to depict the accumulation of the fatigue damage of polysilicon. The pull-in voltage of a clamped-clamped polysilicon beam is an important performance during a beam runs at our desire. The voltage is measured to reflect the accumulation of fatigue damage. |
| |
| Keywords: | MEMS |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《传感技术学报》浏览原始摘要信息 |
|
点击此处可从《传感技术学报》下载全文 |
|
