Thermal reliability and performances of InGaP schottky contact with Cu/Au and Au/Cu-MSM photodetectors |
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Authors: | Chang-Da Tsai Ching-Ting Lee |
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Affiliation: | (1) Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, Republic of China |
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Abstract: | We report the Schottky performance and thermal reliability of a wide bandgap InGaP layer in contact with a Cu/Au metallic
system. An effective Schottky barrier height of 0.97 eV and an ideality factor of 1.21 can be achieved. The thermal reliability
of the resultant Schottky barrier diodes was analyzed using Auger electron spectroscopy and atomic force microscopy. The thermal
reliability could be main tained up to 450°C. The failure mechanism was attributable to the decomposition of the InGaP layer
and the interdiffusion of the chemical elements at higher temperature. Insensitive photoresponsivity with the in cident optical
power was found for the resultant Au/Cu-metal-semiconductor-metalphotodetectors (MSM-PDs). According to the measured temporal
response of the Au/Cu-MSM-PDs, the operation frequency could be above 10 GHz. |
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Keywords: | Atomic force microscopy Au/Cu/InGaP Schottky contacts Auger electron spectroscopy metal-semiconductor-metal photodetectors |
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