Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 ?m grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD) |
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| Authors: | Razeghi M Hirtz P Blondeau R Larivain JP Noel L de Cremoux B Duchemin JP |
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| Affiliation: | Thomson-CSF, Etablissement de Corbeville, Orsay, France; |
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| Abstract: | Room temperature continuous wave (CW) operation at 1.5 ?m has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 ?m and a cavity length of 300 ?m. Values of To as high as 64 K have been obtained, where To is defined by the expression Jth(T) = Jth(0) exp (T/To). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW. |
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