High-speed and high-power GaInAsP/InP junction field-effecttransistor with submicron gate |
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| Authors: | Furutsu M. Sudo H. Soda H. Ishikawa H. Imai H. |
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| Affiliation: | Fujitsu Labs. Ltd., Kanagawa; |
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| Abstract: | Depletion-mode GaInAsP/InP junction field-effect transistors have been fabricated on Fe-doped semi-insulating InP substrates using liquid-phase epitaxial growth techniques. The authors achieved transconductance of 24 mS (160 mS/mm), drain-source saturation current at an on gate bias of 486 mA/mm and current cutoff frequency of 18.8 GHz using a GaInAsP channel layer owing to the gate length reduction |
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