| 半绝缘GaAs退火前后深能级的研究 |
| |
| 引用本文： | 曲果力,张光春,罗晋生. 半绝缘GaAs退火前后深能级的研究[J]. 山东大学学报(工学版), 1991, 0(1) |
| |
| 作者姓名： | 曲果力 张光春 罗晋生 |
| |
| 作者单位： | 山东工业大学基础课教学部，山东工业大学基础课教学部，西安交通大学 |
| |
| 摘 要： | 用TSDC(热激去极化电流)法对半绝缘砷化镓(SI-GaAs)退火前后的深能级进行了测量,并对该方法进行理论分析,推导出这一热激过程的动力学方程。用曲线拟合的方法对陷阱能量E等拟合,理论与实验结果吻合。测得SI-GaAs:Cr样品中Cr产生的深能级为E_c-0.716eV,Ec-0.532eV;高纯SI-GaAs样品中EL_2能级为E_c-0.735eV。另外,还测得其它几个深能级。
|
| 关 键 词： | 半绝缘体 能级 砷化镓 化合物半导体 极化电流 |
ON DEEP LEVELS OF UNANNEALED AND ANNEALED SEMI-INSULATING GALLIUM ARSENIDE |
| |
| Qu Guoli et al. ON DEEP LEVELS OF UNANNEALED AND ANNEALED SEMI-INSULATING GALLIUM ARSENIDE[J]. Journal of Shandong University of Technology, 1991, 0(1) |
| |
| Authors: | Qu Guoli et al |
| |
| Affiliation: | Dept. of Basic Sci. |
| |
| Abstract: | The deep levels of semi-iusulating GaAs crystal before and after annealing are respectively measured by TSDG(Thermolly Stimulated Depolarization Current)method,Theoretic analysis is carried out, kinetic equation for the thermostimulating process is derived and trap energy E et cetera are fitted by curve fitting.The theoretic result is well coincide with the experimental. Measure shows: the deep levels resulted from Cr in Crdoped sample are E_c-0.716 eV and E_c-0.532 eV; the energy level EL_2 in undoped sample is E_c- 0.735 eV. Moreover,several other deep levels are measured and given. |
| |
| Keywords: | Semi-insulator Energy levels Gallium arsenide Compound semiconductor Polarization current |
| 本文献已被 CNKI 等数据库收录！ |
|
