A new multi-finger SCR-based structure for efficient on-chip ESD protection |
| |
Authors: | F Azaïs B Caillard S Dournelle P Salom P Nouet |
| |
Affiliation: | a LIRMM, University Montpellier II/CNRS, 161 rue Ada, 34 392, Montpellier, France;b STMicroelectronics, Central R&D, 850 rue Jean Monnet, 38 929, Crolles, France |
| |
Abstract: | This paper introduces a new SCR-based (silicon controlled rectifier) structure for on-chip ESD protection. The STMSCR (smart triggered multi-finger SCR) relies on the bimodal operation of a LSCR (lateral SCR) using an external triggering circuitry that permits switching from a transparency mode to a protection mode as soon as an ESD event is detected. The trigger voltage can be adjusted by design without any impact on the ESD performance. The STMSCR is multi-finger compliant, thus allowing area-efficient design of pad-located ESD protection. The STMSCR is demonstrated in a 0.18 μm CMOS technology without any process customization; an HBM failure threshold over 115 V/μm is reached while always ensuring current uniformity in multi-finger structures. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|