Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy |
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Authors: | H. C. Kuo J. M. Kuo Y. C. Wang C. H. Lin H. Chen G. E. Stillman |
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Affiliation: | (1) Department of Electrical and Computer Engineering, Microelectronics Laboratory Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, 61801 Urbana, IL;(2) Lucent Technology, Bell Laboratories, 700 Mountain Avenue, 07974 Murray Hill, NJ;(3) Department of Material Science and Engineering, Material Research Laboratory University of Illinois at Urbana-Champaign, 61801 Urbana, IL |
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Abstract: | We report the determination of band offset ratios, using photoluminescence excitation measurements, for GaInP/GaAs and AlInP/GaAs quantum wells grown by gas-source molecular beam epitaxy. To reduce the uncertainty related to the intermixing layer at heterointerfaces, the residual group-V source evacuation time was optimized for abrupt GalnP/GaAs (AlInP/GaAs) interfaces. Based upon thickness and composition values determined by double-crystal x-ray diffraction simulation and cross-sectional transmission electron microscopy, the transition energies of GalnP/GaAs and AlInP/GaAs quantum wells were calculated using a three-band Kane model with varying band-offset ratios. The best fit of measured data to calculated transition energies suggests that the valence-band offset ratio (γ band discontinuity) was 0.63 ± 0.05 for GalnP/GaAs and 0.54 ± 0.05 for AlInP/GaAs heterostructures. This result showed good agreement with photoluminescence data, indicating that the value is independent of temperature. |
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Keywords: | AlInP/GaAs band offset GalnP/GaAs gas source molecular beam epitaxy (GSMBE) photoluminescence (PL) photoluminescence excitation (PLE) three-band Kane |
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