Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy |
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| Authors: | H C Kuo J M Kuo Y C Wang C H Lin H Chen G E Stillman |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, Microelectronics Laboratory Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, 61801 Urbana, IL;(2) Lucent Technology, Bell Laboratories, 700 Mountain Avenue, 07974 Murray Hill, NJ;(3) Department of Material Science and Engineering, Material Research Laboratory University of Illinois at Urbana-Champaign, 61801 Urbana, IL |
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| Abstract: | We report the determination of band offset ratios, using photoluminescence excitation measurements, for GaInP/GaAs and AlInP/GaAs
quantum wells grown by gas-source molecular beam epitaxy. To reduce the uncertainty related to the intermixing layer at heterointerfaces,
the residual group-V source evacuation time was optimized for abrupt GalnP/GaAs (AlInP/GaAs) interfaces. Based upon thickness
and composition values determined by double-crystal x-ray diffraction simulation and cross-sectional transmission electron
microscopy, the transition energies of GalnP/GaAs and AlInP/GaAs quantum wells were calculated using a three-band Kane model
with varying band-offset ratios. The best fit of measured data to calculated transition energies suggests that the valence-band
offset ratio (γ band discontinuity) was 0.63 ± 0.05 for GalnP/GaAs and 0.54 ± 0.05 for AlInP/GaAs heterostructures. This result
showed good agreement with photoluminescence data, indicating that the value is independent of temperature. |
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| Keywords: | AlInP/GaAs band offset GalnP/GaAs gas source molecular beam epitaxy (GSMBE) photoluminescence (PL) photoluminescence excitation (PLE) three-band Kane |
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