退火过程对c轴择优取向的ZnO薄膜的光学性质的影响

利用溶胶凝胶法在石英衬底上采用旋涂法制备出ZnO薄膜，通过X射线衍射仪发现不同的退火温度对ZnO薄膜的择优取向有很大影响；通过紫外可见分光光度计和室温发光谱可以看出，制备的薄膜有很好的光学透过性和很强的紫外发光特性，而不同的退火温度对其光学性质有很大的影响。实验发现采用此种方法在650℃左右退火是一个合适的退火温度，结构特性和光学性质都相对较好；采用热分析方法可知ZnO将在375℃左右从非晶转向结晶状态，因而在常规ZnO薄膜制备方法中增加一步500oC的热处理将有助于提高ZnO薄膜的结晶质量。

Effect of annealing processes on optical properties of c-axis oriented ZnO films

Zinc oxide films were deposited on fused quartz wafers using sol-gel technique and by adopting the spin-coating method. The structure of c-axis oriented ZnO films measured by X-ray diffraction is mainly decided by the post-annealing temperature. ZnO films annealed at different temperatures have a high transmittance and strong UV emission peaks which were measured by UV-VIS double-beam spectrophotometer and PL spectra. It is obvious that the annealing temperature at 650℃ is the best condition for high-quality ZnO film. The thermogravimetric analysis(TGA) of the sol was carried out, and it is found that the temperature from amorphous to more ordered state is 375℃, and crystal ZnO film is helpful to the deposition of ZnO film with high quality via the sol-gel method.