Fabrication and electrical characterization of p-NiPc/n-Si heterojunction

Nickel-phthalocyanine (NiPc) thin film was prepared by thermal evaporation method on n-Si single-crystal substrate to fabricate p-NiPc/n-Si heterojunction. The electrical transport properties of the p-NiPc/n-Si heterojunctions were investigated by temperature-dependent current-voltage (I-V) measurements and room temperature capacitance-voltage (C-V) measurements. The temperature-dependent I-V characteristics revealed that the forward conduction was determined by thermionic-emission and space-charge-limited current (SCLC) mechanisms at low and high voltage, respectively⋅ On the other hand, the reverse current is limited by the carrier generation process. The 1/C²-V plot indicated the junction was abrupt and the junction built-in potential was 0.61 V at room temperature.