Fabrication and electrical characterization of p-NiPc/n-Si heterojunction |
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Authors: | M.M. El-Nahass |
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Affiliation: | Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt |
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Abstract: | Nickel-phthalocyanine (NiPc) thin film was prepared by thermal evaporation method on n-Si single-crystal substrate to fabricate p-NiPc/n-Si heterojunction. The electrical transport properties of the p-NiPc/n-Si heterojunctions were investigated by temperature-dependent current-voltage (I-V) measurements and room temperature capacitance-voltage (C-V) measurements. The temperature-dependent I-V characteristics revealed that the forward conduction was determined by thermionic-emission and space-charge-limited current (SCLC) mechanisms at low and high voltage, respectively⋅ On the other hand, the reverse current is limited by the carrier generation process. The 1/C2-V plot indicated the junction was abrupt and the junction built-in potential was 0.61 V at room temperature. |
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Keywords: | Phthalocyanines Organic/inorganic heterojunctions |
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