Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD |
| |
| Authors: | Tiemin Zhang Guoqing Miao Yixin Jin Hong Jiang Hang Song |
| |
| Affiliation: | a Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, The Chinese Academy of Sciences, Changchun 130033, China
b Graduate School of the Chinese Academy of Sciences, Beijing 100049, China |
| |
| Abstract: | The In0.82Ga0.18As grown on InP (1 0 0) substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with two-step growth method was investigated. It was analyzed that the effect of In content of buffer layer on the crystalline quality and electrical property of the In0.82Ga0.18As eplialyers, which were characterized by X-ray diffraction, scanning electron microscopy, and Hall effect. The experiments show that the crystalline quality and the electrical property of the In0.82Ga0.18As eplialyers have close relation to the In content of buffer layer and will be optimum when the In content of buffer layer is same as that of the epilayer. |
| |
| Keywords: | In0.82Ga0.18As Buffer layer MOCVD |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
