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The study of δ-doped InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistor |
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| Authors: | Jia-Chuan Lin Yu-Chieh Chen |
| Affiliation: | a Department of Electrical Engineering, St. John's University, Taipei 251, Taiwan, ROC b Institute of Automation and Mechatronics, St. John's University, Taipei 251, Taiwan, ROC c Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC |
| Abstract: | An enhancement-mode pseudomorphic high electron mobility transistor (E-mode pHEMT) with In0.49Ga0.51P/In0.25Ga0.75As/GaAs structure is studied in this paper. The two-dimensional device simulator, MEDICI, is used to solve the Poisson's equation and the electron/hole current continuity equations. An optimized δ-doped InGaP/InGaAs pHEMT structure is found to be superior to the conventional AlGaAs/InGaAs pHEMT. It reveals that the maximum drain-source current (IDS) goes up to 1600 mA/mm and transconductance (Gm) is 2120 mS/mm. |
| Keywords: | HEMT E-mode pHEMT δ-Doped Maximum drain-source current Transconductance MEDICI Poisson's equation |
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