Selecting an appropriate ESD protection for discrete RF power LDMOSTs |
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Authors: | T. Smedes,J. de Boet,T. Rö dle |
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Affiliation: | NXP Semiconductors1Philips Semiconductors became NXP Semiconductors in October 2006.1, Gerstweg 2, 6534 AE Nijmegen, The Netherlands |
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Abstract: | For ESD protections of RF Power MOSTs, Vt1 lowering by the RF signal - due to the dV/dt effect - can seriously degrade the RF performance. The use of a cascoded protection solves this problem. A new failure mechanism, related to the discharge of on-chip RF matching capacitors is presented. Adding a current limiting resistor in the protection solves this issue. Combining these solutions yields an appropriate protection for discrete RF power LDMOSTs. |
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