Fabrication of silicon field-emission arrays using masks of amorphous hydrogenated carbon films |
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Authors: | DF Takeuti ES Braga PHL de Faria |
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Affiliation: | Faculty of Electrical and Computer Engineering, State University of Campinas, P.O. Box 6101, Campinas-SP 13083-970, Brazil |
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Abstract: | A fabrication process of silicon field-emission arrays is reported, in which thin films of amorphous hydrogenated carbon (a-C:H) are employed as masks in a two-step plasma-etching process, using pure SF6 and a mixture of SF6 and O2. In comparison with processes that involve SiO2 masks, the use of a-C:H improved the selectivity of the plasma etching, particularly in the case of pure SF6. An estimation of Utsumi's figure of merit showed that a significant enhancement in electric field can be achieved, as a result of the sharp tips fabricated through this process. |
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Keywords: | Field-emission devices Amorphous hydrogenated carbon Plasma etching |
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