Ferroelectric yttrium doped hafnium oxide films from all-inorganic aqueous precursor solution |
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Authors: | Xuexia Wang Dayu Zhou Shuaidong Li Xiaohua Liu Peng Zhao Nana Sun Faizan Ali Jingjing Wang |
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Affiliation: | Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, 116024, China |
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Abstract: | We report a unique aqueous solution deposition method to prepare yttrium doped hafnium oxide (Y:HfO2) thin films using all-inorganic reagents. The composition and chemical bonding features of the films were investigated using X-ray photoelectron spectroscopy. The Y:HfO2 film was integrated into metal-insulator-semiconductor (MIS) structure capacitors for electrical measurements. A transition of the polarization behavior from apparent ferroelectric-type to linear dielectric-type was observed for films with thickness increasing from 25?nm to 80?nm, which is correlated to the dominant crystal structure change from high-symmetry phase to monoclinic phase evidenced by grazing incidence X-ray diffraction analysis. |
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Keywords: | A Films B X-ray methods C Ferroelectric properties E Capacitors |
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