Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing |
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| Authors: | Suhyeong Lee Ji Min Kim Changhyun Kim Hyunwoo Kim Hong Jeon Kang Min-Woo Ha Hyeong Joon Kim |
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| Affiliation: | 1. Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea;2. Department of Electrical Engineering, Myongji University, 116 Myongji-ro, Cheoin-gu, Yongin, Gyeonggi 17058, Republic of Korea |
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| Abstract: | Post-deposition annealing (PDA) was used to improve gate oxide physical and electrical properties. Deposition was accomplished by plasma-enhanced atomic layer deposition (PEALD). We investigated the densification silicon dioxide (SiO2) formed by PEALD on 4H-silicon carbide (SiC) using PDA without oxidation and nitridation. PDA was conducted at 400–1200?°C in argon (Ar) ambient. The thickness of the SiO2 was reduced by up to 13.5% after Ar PDA at 1000?°C. As the temperature of the Ar PDA increased, the etching rate of SiO2 decreased. At temperatures greater than 1000?°C, the SiO2 etching rate was low compared with that of thermal SiO2. After PDA, the SiO2/4H-SiC interface was smoother than that of thermal SiO2/4H-SiC. The current density versus oxide field and capacitance versus voltage of the SiO2/4H-SiC metal oxide semiconductor (MOS) capacitors were measured. Sufficient densification of SiO2 formed by PEALD on 4H-SiC was obtained using Ar PDA at 1200?°C. |
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| Keywords: | (A) Films (C) Dielectric properties (E) Capacitors |
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