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Catalytic CVD growth and properties of a-C:H and a-C:N |
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| Authors: | H. Nakayama K. Takatsuji S. Moriwaki K. Murakami K. Mizoguchi M. Nakayama Y. Miura |
| Affiliation: | a Department of Applied Physics, Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan b Department of Applied Chemistry, Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan |
| Abstract: | Hydrogenated amorphous carbon (a-C:H) and nitrided amorphous carbon (a-C:N) films have been synthesized on quartz substrates at a substrate temperature of 700 °C using a catalytic chemical vapor deposition (Cat-CVD) method. Raman spectra of a-C:H films showed two principal bands, the G-band at 1600 cm−1 and the D-band at 1350 cm−1. Those of a-C:N films showed similar spectra, with a G′ band at 1640 cm−1, the peak energy of which is higher than that of the G-band in a-C:H. The intensity ratio /ID, which is a measure of the degree of order in a-C:H, decreased for a-C:H with increasing CH4/H2 gas-flow ratio. On the contrary, the /ID ratio increased with increasing CH4/H2 gas-flow ratio. |
| Keywords: | Catalytic chemical vapor deposition Amorphous carbon Amorphous carbon nitride Raman scattering |
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