High-power broad-band single-mode InGaAsP/InP superluminescent diode |
| |
| Authors: | N A Pikhtin Yu V Il’in A Yu Leshko A V Lyutetskii A L Stankevich I S Tarasov N V Fetisova |
| |
| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia |
| |
| Abstract: | An InGaAsP/InP separate-confinement double heterostructure having a broad gain profile was used to fabricate superluminescent
diodes having high optical power (40 mW), a broad radiation spectrum (65 nm at half-width), and low percent modulation (<1%).
Using a cw pump current of 150 mA, 1mW of superluminescence radiation was obtained at the exit from a single-mode optical
fiber.
Pis’ma Zh. Tekh. Fiz. 25, 16–22 (August 12, 1999) |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
