| Cu掺杂浓度对ZnO薄膜的结构、透光性和电学性质的影响 |
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| 引用本文： | 徐庆岩,吴雪梅,诸葛兰剑,陈学梅,吴兆丰.Cu掺杂浓度对ZnO薄膜的结构、透光性和电学性质的影响[J].微细加工技术,2008(6). |
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| 作者姓名： | 徐庆岩 吴雪梅 诸葛兰剑 陈学梅 吴兆丰 |
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| 作者单位： | 1. 苏州大学物理科学与技术学院,江苏苏州,215006;江苏省薄膜材料重点实验室,江苏苏州,215006
2. 苏州大学分析测试中心,江苏苏州,215006;江苏省薄膜材料重点实验室,江苏苏州,215006 |
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| 基金项目： | 国家自然科学基金，江苏省高校自然科学基金 |
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| 摘 要： | 采用射频磁控溅射方法在导电玻璃和石英衬底上制备了未掺杂和不同Cu掺杂量的ZnO薄膜.XRD显示,适当的Cu掺杂增强了ZnO的(002)衍射峰的强度;用紫外分光光度计测量了样品的透光性,结果显示,随掺杂量的增加,其透光性减弱,但在Cu掺杂量为9.6%时其透光性还在60%以上.用四探针测量了样品的表面电阻率,薄膜的电阻率随Cu掺杂量的增加而增加.
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| 关 键 词： | Cu掺杂 ZnO薄膜 电光学性质 |
Effects of Cu Dopant on the Structure,Light Transmittance and Electrics Properties of ZnO Films |
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| XU Qing-yan,WU Xue-mei,ZHUGE Lan-jian,CHEN Xue-mei,WU Zhao-feng.Effects of Cu Dopant on the Structure,Light Transmittance and Electrics Properties of ZnO Films[J].Microfabrication Technology,2008(6). |
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| Authors: | XU Qing-yan WU Xue-mei ZHUGE Lan-jian CHEN Xue-mei WU Zhao-feng |
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| Affiliation: | XU Qing-yan1,3,WU Xue-mei1,ZHUGE Lan-jian2,CHEN Xue-mei1,WU Zhao-feng1,3(1.Department of physics,Soochow University,Suzhou 215006,China,2.Analysis , Testing Center,SoochowUniversity,3.The Key Laboratory of Thin Films of Jiangsu,China) |
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| Abstract: | The Cu-doped ZnO films were prepared by the radio frequency(RF) magnetron sputtering techniqueon ITO glass and quartz substrates.The structure and light transmittance of Cu-doped ZnO films were discussed in details.The results indicate that Cu doping enhances the intensity of the ZnO(002) peak.The transmittance of the Cu-doped ZnO films are decreased with the increasing of Cu content.In additional,electric resistivity increases with the increasing of Cu content. |
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| Keywords: | radio frequency(RF) magnetron sputtering ZnO thin films Cu-doped |
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