Doping and annealing effects on ZnO:Cd thin films by sol-gel method |
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| Authors: | Gang LiXuebin Zhu Xianwu TangWenhai Song Zhaorong YangJianming Dai Yuping SunXu Pan Songyuan Dai |
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| Affiliation: | a Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, PR China
b Key Laboratory of New Thin Film Solar Cells, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, PR China |
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| Abstract: | In this article, ZnO:Cd films were successfully deposited on glass substrates by a sol-gel technique. The influence of doping concentration and annealing temperature effects was carefully investigated. All films exhibited c-axis preferential orientation and optical transparency with visible transmittance >80%. The minimum room temperature resistivity of 0.0341 Ω cm was obtained with 10 at.% Cd doping under 600 °C annealing temperature. The optical band gap of ZnO:Cd film was reduced as Cd doping concentration increased, while the band gap increased with the increase of annealing temperature. |
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| Keywords: | ZnO:Cd Transparent conductive oxide Sol-gel |
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