Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates |
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| Authors: | G. V. Astakhov V. P. Kochereshko D. G. Vasil’ev V. P. Evtikhiev V. E. Tokranov I. V. Kudryashov G. V. Mikhailov |
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| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under the influence of the magnetic field is observed. The concentration of quantum dots is determined by analyzing the data. Fiz. Tekh. Poluprovodn. 33, 1084–1087 (September 1999) |
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