New red phosphor for near-ultraviolet light-emitting diodes with high color-purity |
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| Authors: | Zhengliang Wang Pei He Jishou Zhao |
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| Affiliation: | a School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031, PR China
b School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, PR China |
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| Abstract: | New red phosphors, Na5Eu(MoO4)4 doped with boron oxide were prepared by the solid-state reaction. Their structure and photo-luminescent properties were investigated. With the introduction of boron oxide, the red emission intensity of the phosphors under 395 nm excitation is strengthened, with high color-purity (x = 0.673, y = 0.327). The single red light-emitting diode was obtained by combining InGaN chip with the red phosphor, bright red light can be observed by naked eyes from the red light-emitting diodes under a forward bias of 20 mA. |
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| Keywords: | A. Inorganic compounds C. X-ray diffraction D. Luminescence D. Optical properties |
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